Conference Brochure

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Conference Announcement

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Agenda

Call for paper

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We will be pleased to accept papers describing new findings in the following or related areas:

Mechanisms, Modeling and New Phenomena of Radiation Effects in CMOS

  • Physics behind phenomena
  • Modeling and simulation
  • Advanced CMOS - planar and FinFET
  • SOI devices and circuits
  • Nuclear radiation effects

Radiation Effects on More-Than-Moore Devices and Circuits

  • Non-silicon devices
  • Non-volatile Memories
  • 3D integrated circuits
  • Sensors
  • Photonic devices
  • Emerging devices

Radiation Effects on Power Devices and Circuits

  • Single-event burnout
  • Single-event gate rupture
  • Total ionizing dose
  • Transient effects

Radiation Hardening Methodologies

  • Layout and circuit techniques
  • System and software techniques
  • Process or materials

Radiation Hardness Assurance and Evaluation

  • MBU/MCU and SET test methods
  • Frequency, voltage, temperature and orientation
  • Proton, neutron and electron test methods
  • Laser test methods
  • Dose rate test
  • Radiation environment modeling, on-orbit test and forecast

PROCEDURE FOR SUBMITTING PAPERS

Authors must conform to the following requirements:

1. Prepare a single Word/Adobe Acrobat file consisting of a cover page and an informative paper describing results appropriate for 10-minute oral or a poster presentation. The cover page must provide an abstract no longer than 50 words, the title, name and company affiliation of the authors and company address (city, state/province, country). Identify the author presenting the paper and provide telephone, fax, and email address. The paper must include sufficient detail about the work to permit a meaningful technical review. In the paper, clearly indicate (a) the purpose of your work, (b) significant new results with supporting technical material, and (c) how your work advances the state of the art. Show key references to other related work. The paper must be no less than two and no more than four pages in length, including figures and tables. All figures and tables must be large enough to be clearly read.

2. Prepare your paper in single-column format, using 11 point or greater font size, formatted for either U.S. Standard (8.5 x 11 inch) or A4 (21 x 29.7 cm) page layout, with 1 inch (2.5 cm) margins on all four sides.

3. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open attendance international meeting.

4. Paper submission is electronic only, through rad2018.chinaaet.com. The submission process consists of entering the paper title, author(s) and affiliation(s), and an abstract. Authors are prompted to state their preference for presentation (oral or poster) and for session. Details of the submission process may be found at rad2018.chinaaet.com. The final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions.

5. About 10% of papers presented at the conference will be recommended for publication to SCI journals, and others will be submitted for publication in the IEEE Explore.

Steered by

IEEE

Association RADECS

Supported By

Chinese Institute of Electronics

Chinese Society of Astronautics

Chinese Nuclear Society

CASC Science and Technology Committee

National Innovation Center of Radiation Application

Hosted by

China Academy of Aerospace Electronics Technology

Organized by

Beijing Microelectronics Technology Institute

Harbin Institute of Technology

co-organizer

The 6th Research Institute of China Electronics Corporation

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